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SI5511DC-T1-GE3
- Delenummer:
- SI5511DC-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N/P-CH 30V 4A 1206-8
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17324 Pieces
- Dataark:
- SI5511DC-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SI5511DC-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SI5511DC-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2V @ 250µA |
|---|---|
| Leverandør Enhetspakke: | 1206-8 ChipFET™ |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 55 mOhm @ 4.8A, 4.5V |
| Strøm - Maks: | 3.1W, 2.6W |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-SMD, Flat Lead |
| Andre navn: | SI5511DC-T1-GE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI5511DC-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 435pF @ 15V |
| Gateavgift (Qg) (Maks) @ Vgs: | 7.1nC @ 5V |
| FET Type: | N and P-Channel |
| FET-funksjonen: | Logic Level Gate |
| Utvidet beskrivelse: | Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™ |
| Drain til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N/P-CH 30V 4A 1206-8 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 4A, 3.6A |
| Email: | [email protected] |
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