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SIA417DJ-T1-GE3
- Delenummer:
- SIA417DJ-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 8V 12A SC70-6
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14580 Pieces
- Dataark:
- SIA417DJ-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIA417DJ-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIA417DJ-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 1V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® SC-70-6 Single |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 23 mOhm @ 7A, 4.5V |
| Strømdissipasjon (maks): | 3.5W (Ta), 19W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | PowerPAK® SC-70-6 |
| Andre navn: | SIA417DJ-T1-GE3TR SIA417DJT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SIA417DJ-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1600pF @ 4V |
| Gateavgift (Qg) (Maks) @ Vgs: | 32nC @ 5V |
| FET Type: | P-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | P-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
| Drain til Source Voltage (VDSS): | 8V |
| Beskrivelse: | MOSFET P-CH 8V 12A SC70-6 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIA417DJ-T1-GE3
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