Kjøpe SIE820DF-T1-GE3 med BYCHPS
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SIE820DF-T1-GE3
- Delenummer:
- SIE820DF-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 20V 50A POLARPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17455 Pieces
- Dataark:
- SIE820DF-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIE820DF-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIE820DF-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 10-PolarPAK® (S) |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 3.5 mOhm @ 18A, 4.5V |
| Strømdissipasjon (maks): | 5.2W (Ta), 104W (Tc) |
| emballasje: | Cut Tape (CT) |
| Pakke / tilfelle: | 10-PolarPAK® (S) |
| Andre navn: | SIE820DF-T1-GE3CT |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SIE820DF-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 4300pF @ 10V |
| Gateavgift (Qg) (Maks) @ Vgs: | 143nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S) |
| Drain til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N-CH 20V 50A POLARPAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
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