Kjøpe TK10E60W,S1VX med BYCHPS
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TK10E60W,S1VX
- Delenummer:
- TK10E60W,S1VX
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N CH 600V 9.7A TO-220
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14206 Pieces
- Dataark:
- TK10E60W,S1VX.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.7V @ 500µA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-220 |
| Serie: | DTMOSIV |
| Rds På (Maks) @ Id, Vgs: | 380 mOhm @ 4.9A, 10V |
| Strømdissipasjon (maks): | 100W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-220-3 |
| Andre navn: | TK10E60W,S1VX(S TK10E60WS1VX |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 16 Weeks |
| Produsentens varenummer: | TK10E60W,S1VX |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 700pF @ 300V |
| Gateavgift (Qg) (Maks) @ Vgs: | 20nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | Super Junction |
| Utvidet beskrivelse: | N-Channel 600V 9.7A (Ta) 100W (Tc) Through Hole TO-220 |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N CH 600V 9.7A TO-220 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 9.7A (Ta) |
| Email: | [email protected] |
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