Kjøpe EPC8010ENGR med BYCHPS
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EPC8010ENGR
- Delenummer:
- EPC8010ENGR
- Produsent:
- EPC
- Beskrivelse:
- TRANS GAN 100V 2.7A BUMPED DIE
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 16037 Pieces
- Dataark:
- EPC8010ENGR.pdf
Introduksjon
BYCHIPS er strømprodusenten for EPC8010ENGR, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for EPC8010ENGR via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | GaNFET (Gallium Nitride) |
| Leverandør Enhetspakke: | Die |
| Serie: | eGaN® |
| Rds På (Maks) @ Id, Vgs: | 160 mOhm @ 500mA, 5V |
| Strømdissipasjon (maks): | - |
| emballasje: | Tray |
| Pakke / tilfelle: | - |
| Andre navn: | 917-EPC8010ENGR EPC8010ENGJ |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | EPC8010ENGR |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 55pF @ 50V |
| Gateavgift (Qg) (Maks) @ Vgs: | 0.48nC @ 5V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Drain til Source Voltage (VDSS): | 100V |
| Beskrivelse: | TRANS GAN 100V 2.7A BUMPED DIE |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 2.7A (Ta) |
| Email: | [email protected] |
Beslektede deler til EPC8010ENGR
| Bilde | Delenummer | produsenter | Beskrivelse | Utsikt |
|---|---|---|---|---|
 |
EPC8010 | EPC | TRANS GAN 100V 2.7A BUMPED DIE | Forespørsel |
|
EPC8007ENGR | EPC | TRANS GAN 40V 3.8A BUMPED DIE | Forespørsel |
|
EPC8005ENGR | EPC | TRANS GAN 65V 2.9A BUMPED DIE | Forespørsel |
 |
AOL1412 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 85A 8ULTRASO | Forespørsel |
 |
IRF610STRR | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | Forespørsel |
 |
2SK3746-1E | ON Semiconductor | MOSFET N-CH 1500V 2A | Forespørsel |
 |
NTD60N02R-35G | ON Semiconductor | MOSFET N-CH 25V 8.5A IPAK | Forespørsel |
 |
HUFA75329S3S | Fairchild/ON Semiconductor | MOSFET N-CH 55V 49A D2PAK | Forespørsel |
|
EPC8002ENGR | EPC | TRANS GAN 65V 2A BUMPED DIE | Forespørsel |
|
EPC8004 | EPC | TRANS GAN 40V 2.7A BUMPED DIE | Forespørsel |
 |
NDD05N50ZT4G | ON Semiconductor | MOSFET N-CH 500V 5A DPAK | Forespørsel |
|
EPC8009ENGR | EPC | TRANS GAN 65V 4.1A BUMPED DIE | Forespørsel |
 |
IRF7807APBF | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | Forespørsel |
|
EPC8008ENGR | EPC | TRANS GAN 40V 2.7A BUMPED DIE | Forespørsel |
|
EPC8009 | EPC | TRANS GAN 65V 2.7A BUMPED DIE | Forespørsel |
|
EPC8003ENGR | EPC | TRANS GAN 100V 2.5A BUMPED DIE | Forespørsel |
 |
EPC8002 | EPC | TRANS GAN 65V 2.7A BUMPED DIE | Forespørsel |
|
EPC8004ENGR | EPC | TRANS GAN 40V 4.4A BUMPED DIE | Forespørsel |
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