Kjøpe A2I08H040GNR1 med BYCHPS
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A2I08H040GNR1
- Delenummer:
- A2I08H040GNR1
- Produsent:
- NXP Semiconductors / Freescale
- Beskrivelse:
- IC RF LDMOS AMP
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18222 Pieces
- Dataark:
- A2I08H040GNR1.pdf
Introduksjon
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spesifikasjoner
| Spenning - Test: | 28V |
|---|---|
| Spenningsvurdering: | 65V |
| Transistor Type: | LDMOS (Dual) |
| Leverandør Enhetspakke: | TO-270WBG-15 |
| Serie: | - |
| Power - Output: | 9W |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-270-15 Variant, Gull Wing |
| Andre navn: | 935320823528 |
| Støy Figur: | - |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 10 Weeks |
| Produsentens varenummer: | A2I08H040GNR1 |
| Gevinst: | 30.7dB |
| Frekvens: | 920MHz |
| Utvidet beskrivelse: | RF Mosfet LDMOS (Dual) 28V 25mA 920MHz 30.7dB 9W TO-270WBG-15 |
| Beskrivelse: | IC RF LDMOS AMP |
| Nåværende vurdering: | - |
| Nåværende - Test: | 25mA |
| Email: | [email protected] |
Beslektede deler til A2I08H040GNR1
| Bilde | Delenummer | produsenter | Beskrivelse | Utsikt |
|---|---|---|---|---|
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BLF2425M7L250P,118 | Ampleon USA Inc. | RF FET LDMOS 65V 15DB SOT539A | Forespørsel |
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BLF878,112 | Ampleon USA Inc. | RF FET LDMOS 89V 21DB SOT979A | Forespørsel |
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NE3514S02-T1C-A | CEL | HJ-FET NCH 10DB S02 | Forespørsel |
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A2I08H040NR1 | NXP USA Inc. | IC RF LDMOS AMP | Forespørsel |
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MRF6V13250HSR5 | NXP USA Inc. | FET RF 120V 1.3GHZ NI780S | Forespørsel |
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MRF9045LSR5 | NXP USA Inc. | FET RF 65V 945MHZ NI-360S | Forespørsel |
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PTRA093302DC V1 R250 | Infineon Technologies | IC RF FET LDMOS 330W H-49248H-4 | Forespørsel |
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NE3515S02-T1D-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Forespørsel |
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PTFC270051MV2R1KXUMA1 | Infineon Technologies | IC AMP RF LDMOS | Forespørsel |
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BLF647P,112 | Ampleon USA Inc. | RF FET LDMOS 65V 18DB SOT1121A | Forespørsel |
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