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APT18M80B
- Delenummer:
- APT18M80B
- Produsent:
- Microsemi
- Beskrivelse:
- MOSFET N-CH 800V 19A TO-247
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18798 Pieces
- Dataark:
- 1.APT18M80B.pdf2.APT18M80B.pdf
Introduksjon
BYCHIPS er strømprodusenten for APT18M80B, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for APT18M80B via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 5V @ 1mA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-247 [B] |
| Serie: | POWER MOS 8™ |
| Rds På (Maks) @ Id, Vgs: | 530 mOhm @ 9A, 10V |
| Strømdissipasjon (maks): | 500W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 22 Weeks |
| Produsentens varenummer: | APT18M80B |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 3760pF @ 25V |
| Gateavgift (Qg) (Maks) @ Vgs: | 120nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 800V 19A (Tc) 500W (Tc) Through Hole TO-247 [B] |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 19A TO-247 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 19A (Tc) |
| Email: | [email protected] |
Beslektede deler til APT18M80B
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