Kjøpe APT35GP120B2DQ2G med BYCHPS
Kjøp med garanti
APT35GP120B2DQ2G
- Delenummer:
- APT35GP120B2DQ2G
- Produsent:
- Microsemi
- Beskrivelse:
- IGBT 1200V 96A 543W TMAX
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 13756 Pieces
Introduksjon
BYCHIPS er strømprodusenten for APT35GP120B2DQ2G, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for APT35GP120B2DQ2G via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 1200V |
|---|---|
| Vce (på) (Maks) @ Vge, Ic: | 3.9V @ 15V, 35A |
| Testtilstand: | 600V, 35A, 4.3 Ohm, 15V |
| Td (på / av) @ 25 ° C: | 16ns/95ns |
| Bytte energi: | 750µJ (on), 680µJ (off) |
| Serie: | POWER MOS 7® |
| Strøm - Maks: | 543W |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-247-3 Variant |
| Andre navn: | APT35GP120B2DQ2GMI APT35GP120B2DQ2GMI-ND |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 22 Weeks |
| Produsentens varenummer: | APT35GP120B2DQ2G |
| Inngangstype: | Standard |
| IGBT Type: | PT |
| Gate Charge: | 150nC |
| Utvidet beskrivelse: | IGBT PT 1200V 96A 543W Through Hole |
| Beskrivelse: | IGBT 1200V 96A 543W TMAX |
| Nåværende - Samlerpulserte (Icm): | 140A |
| Nåværende - Samler (Ic) (Maks): | 96A |
| Email: | [email protected] |
Beslektede deler til APT35GP120B2DQ2G
| Bilde | Delenummer | produsenter | Beskrivelse | Utsikt |
|---|---|---|---|---|
 |
APT35GT120JU2 | Microsemi Corporation | IGBT 1200V 35A 260W SOT-227 | Forespørsel |
|
APT35GP120JDQ2 | Microsemi Corporation | IGBT 1200V 64A 284W SOT227 | Forespørsel |
 |
APT35GA90B | Microsemi Corporation | IGBT 900V 63A 290W TO-247 | Forespørsel |
|
APT35GA90BD15 | Microsemi Corporation | IGBT 900V 63A 290W TO247 | Forespørsel |
|
APT35GP120BG | Microsemi Corporation | IGBT 1200V 96A 543W TO247 | Forespørsel |
 |
APT35DL120HJ | Microsemi Corporation | DIODE MODULE 1.2KV SOT227 | Forespørsel |
 |
HGTP12N60C3 | Fairchild/ON Semiconductor | IGBT 600V 24A 104W TO220AB | Forespørsel |
 |
APT35GN120L2DQ2G | Microsemi Corporation | IGBT 1200V 94A 379W TO264 | Forespørsel |
|
APT35GP120J | Microsemi Corporation | IGBT 1200V 64A 284W SOT227 | Forespørsel |
|
APT35GN120BG | Microsemi Corporation | IGBT 1200V 94A 379W TO247 | Forespørsel |
|
APT35GT120JU3 | Microsemi Corporation | IGBT 1200V 55A 260W SOT227 | Forespørsel |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog