Kjøpe FQD12N20TM_F080 med BYCHPS
Kjøp med garanti
FQD12N20TM_F080
- Delenummer:
- FQD12N20TM_F080
- Produsent:
- Fairchild/ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 200V 9A DPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 15426 Pieces
Introduksjon
BYCHIPS er strømprodusenten for FQD12N20TM_F080, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for FQD12N20TM_F080 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | D-Pak |
| Serie: | QFET® |
| Rds På (Maks) @ Id, Vgs: | 280 mOhm @ 4.5A, 10V |
| Strømdissipasjon (maks): | 2.5W (Ta), 55W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | FQD12N20TM_F080 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 910pF @ 25V |
| Gateavgift (Qg) (Maks) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak |
| Drain til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 9A DPAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 9A (Tc) |
| Email: | [email protected] |
Beslektede deler til FQD12N20TM_F080
| Bilde | Delenummer | produsenter | Beskrivelse | Utsikt |
|---|---|---|---|---|
 |
FQD12N20TF | Fairchild/ON Semiconductor | MOSFET N-CH 200V 9A DPAK | Forespørsel |
|
FQD12N20TM | Fairchild/ON Semiconductor | MOSFET N-CH 200V 9A DPAK | Forespørsel |
|
FQD12P10TM_F085 | Fairchild/ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | Forespørsel |
|
FQD12N20LTM | Fairchild/ON Semiconductor | MOSFET N-CH 200V 9A DPAK | Forespørsel |
|
FQD12P10TM | Fairchild/ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | Forespørsel |
 |
SI4628DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 38A 8SOIC | Forespørsel |
|
FQD12N20LTF | Fairchild/ON Semiconductor | MOSFET N-CH 200V 9A DPAK | Forespørsel |
|
FQD12N20LTM_F085 | Fairchild/ON Semiconductor | MOSFET N-CH 200V 9A DPAK | Forespørsel |
|
FQD12P10TF | Fairchild/ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | Forespørsel |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog