Kjøpe GA10SICP12-263 med BYCHPS
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GA10SICP12-263
- Delenummer:
- GA10SICP12-263
- Produsent:
- GeneSiC Semiconductor
- Beskrivelse:
- TRANS SJT 1200V 25A TO263-7
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 15225 Pieces
- Dataark:
- GA10SICP12-263.pdf
Introduksjon
BYCHIPS er strømprodusenten for GA10SICP12-263, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for GA10SICP12-263 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | - |
|---|---|
| Vgs (maks): | 3.5V |
| Teknologi: | SiC (Silicon Carbide Junction Transistor) |
| Leverandør Enhetspakke: | D2PAK (7-Lead) |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 100 mOhm @ 10A |
| Strømdissipasjon (maks): | 170W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Andre navn: | 1242-1318 GA10SICP12-263-ND |
| Driftstemperatur: | 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 18 Weeks |
| Produsentens varenummer: | GA10SICP12-263 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1403pF @ 800V |
| Gateavgift (Qg) (Maks) @ Vgs: | - |
| FET Type: | - |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | 1200V (1.2kV) 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead) |
| Drivspenning (Maks. Rds På, Min Rds På): | - |
| Drain til Source Voltage (VDSS): | 1200V (1.2kV) |
| Beskrivelse: | TRANS SJT 1200V 25A TO263-7 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 25A (Tc) |
| Email: | [email protected] |
Beslektede deler til GA10SICP12-263
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