Kjøpe GP1M010A080N med BYCHPS
Kjøp med garanti
GP1M010A080N
- Delenummer:
- GP1M010A080N
- Produsent:
- Global Power Technologies Group
- Beskrivelse:
- MOSFET N-CH 900V 10A TO3PN
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 12098 Pieces
- Dataark:
- GP1M010A080N.pdf
Introduksjon
BYCHIPS er strømprodusenten for GP1M010A080N, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for GP1M010A080N via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-3PN |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 1.05 Ohm @ 5A, 10V |
| Strømdissipasjon (maks): | 312W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-3P-3, SC-65-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | GP1M010A080N |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 2336pF @ 25V |
| Gateavgift (Qg) (Maks) @ Vgs: | 53nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN |
| Drain til Source Voltage (VDSS): | 900V |
| Beskrivelse: | MOSFET N-CH 900V 10A TO3PN |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 10A (Tc) |
| Email: | [email protected] |
Beslektede deler til GP1M010A080N
| Bilde | Delenummer | produsenter | Beskrivelse | Utsikt |
|---|---|---|---|---|
 |
GP1M010A080H | Global Power Technologies Group | MOSFET N-CH 800V 9.5A TO220 | Forespørsel |
 |
GP1M016A025PG | Global Power Technologies Group | MOSFET N-CH 250V 16A IPAK | Forespørsel |
|
GP1M015A050H | Global Power Technologies Group | MOSFET N-CH 500V 14A TO220 | Forespørsel |
|
GP1M010A060H | Global Power Technologies Group | MOSFET N-CH 600V 10A TO220 | Forespørsel |
 |
GP1M010A080FH | Global Power Technologies Group | MOSFET N-CH 800V 9.5A TO220F | Forespørsel |
|
GP1M010A060FH | Global Power Technologies Group | MOSFET N-CH 600V 10A TO220F | Forespørsel |
|
GP1M012A060FH | Global Power Technologies Group | MOSFET N-CH 600V 12A TO220F | Forespørsel |
|
GP1M015A050FH | Global Power Technologies Group | MOSFET N-CH 500V 14A TO220F | Forespørsel |
|
GP1M011A050FSH | Global Power Technologies Group | MOSFET N-CH 500V 10A TO220F | Forespørsel |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog