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IPAN65R650CEXKSA1
- Delenummer:
- IPAN65R650CEXKSA1
- Beskrivelse:
- MOSFET NCH 650V 10.1A TO220-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 16084 Pieces
- Dataark:
- IPAN65R650CEXKSA1.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.5V @ 210µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO220 Full Pack |
| Serie: | CoolMOS™ |
| Rds På (Maks) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Strømdissipasjon (maks): | 28W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-220-3 Full Pack |
| Andre navn: | SP001508828 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 12 Weeks |
| Produsentens varenummer: | IPAN65R650CEXKSA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 440pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | Super Junction |
| Utvidet beskrivelse: | N-Channel 650V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET NCH 650V 10.1A TO220-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 10.1A (Tc) |
| Email: | [email protected] |
Beslektede deler til IPAN65R650CEXKSA1
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