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IPB065N15N3GE8187ATMA1
- Delenummer:
- IPB065N15N3GE8187ATMA1
- Beskrivelse:
- MOSFET N-CH 150V 130A TO263-7
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14748 Pieces
- Dataark:
- IPB065N15N3GE8187ATMA1.pdf
Introduksjon
BYCHIPS er strømprodusenten for IPB065N15N3GE8187ATMA1, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for IPB065N15N3GE8187ATMA1 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 270µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO263-7 |
| Serie: | OptiMOS™ |
| Rds På (Maks) @ Id, Vgs: | 6.5 mOhm @ 100A, 10V |
| Strømdissipasjon (maks): | 300W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Andre navn: | IPB065N15N3 G E8187 IPB065N15N3 G E8187-ND IPB065N15N3 G E8187TR-ND SP000939336 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | IPB065N15N3GE8187ATMA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 7300pF @ 75V |
| Gateavgift (Qg) (Maks) @ Vgs: | 93nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7 |
| Drain til Source Voltage (VDSS): | 150V |
| Beskrivelse: | MOSFET N-CH 150V 130A TO263-7 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 130A (Tc) |
| Email: | [email protected] |
Beslektede deler til IPB065N15N3GE8187ATMA1
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IPB06N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Forespørsel |
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IPB06N03LB | Infineon Technologies | MOSFET N-CH 30V 50A D2PAK | Forespørsel |
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IPB06N03LA | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Forespørsel |
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IPB06CN10N G | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | Forespørsel |
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