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IPB123N10N3 G
- Delenummer:
- IPB123N10N3 G
- Beskrivelse:
- MOSFET N-CH 100V 58A TO263-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 15991 Pieces
- Dataark:
- IPB123N10N3 G.pdf
Introduksjon
BYCHIPS er strømprodusenten for IPB123N10N3 G, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for IPB123N10N3 G via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.5V @ 46µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO263-2 |
| Serie: | OptiMOS™ |
| Rds På (Maks) @ Id, Vgs: | 12.3 mOhm @ 46A, 10V |
| Strømdissipasjon (maks): | 94W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navn: | IPB123N10N3 G-ND IPB123N10N3 GTR IPB123N10N3G IPB123N10N3GATMA1 SP000485968 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 12 Weeks |
| Produsentens varenummer: | IPB123N10N3 G |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 2500pF @ 50V |
| Gateavgift (Qg) (Maks) @ Vgs: | 35nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 100V 58A (Tc) 94W (Tc) Surface Mount PG-TO263-2 |
| Drivspenning (Maks. Rds På, Min Rds På): | 6V, 10V |
| Drain til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 58A TO263-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 58A (Tc) |
| Email: | [email protected] |
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