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IPD053N08N3GBTMA1
- Delenummer:
- IPD053N08N3GBTMA1
- Beskrivelse:
- MOSFET N-CH 80V 90A TO252-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17506 Pieces
- Dataark:
- IPD053N08N3GBTMA1.pdf
Introduksjon
BYCHIPS er strømprodusenten for IPD053N08N3GBTMA1, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for IPD053N08N3GBTMA1 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.5V @ 90µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds På (Maks) @ Id, Vgs: | 5.3 mOhm @ 90A, 10V |
| Strømdissipasjon (maks): | 150W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | IPD053N08N3 G IPD053N08N3 G-ND IPD053N08N3 GTR-ND IPD053N08N3G SP000395183 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | IPD053N08N3GBTMA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 4750pF @ 40V |
| Gateavgift (Qg) (Maks) @ Vgs: | 69nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3 |
| Drain til Source Voltage (VDSS): | 80V |
| Beskrivelse: | MOSFET N-CH 80V 90A TO252-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 90A (Tc) |
| Email: | [email protected] |
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