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IPD122N10N3GBTMA1
- Delenummer:
- IPD122N10N3GBTMA1
- Beskrivelse:
- MOSFET N-CH 100V 59A TO252-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17723 Pieces
- Dataark:
- IPD122N10N3GBTMA1.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.5V @ 46µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds På (Maks) @ Id, Vgs: | 12.2 mOhm @ 46A, 10V |
| Strømdissipasjon (maks): | 94W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | IPD122N10N3 G IPD122N10N3 G-ND IPD122N10N3 GTR-ND IPD122N10N3G SP000485966 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | IPD122N10N3GBTMA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 2500pF @ 50V |
| Gateavgift (Qg) (Maks) @ Vgs: | 35nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3 |
| Drain til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 59A TO252-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 59A (Tc) |
| Email: | [email protected] |
Beslektede deler til IPD122N10N3GBTMA1
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