Kjøpe IPD30N06S2L13ATMA4 med BYCHPS
Kjøp med garanti
IPD30N06S2L13ATMA4
- Delenummer:
- IPD30N06S2L13ATMA4
- Beskrivelse:
- MOSFET N-CH 55V 30A TO252-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 16690 Pieces
- Dataark:
- IPD30N06S2L13ATMA4.pdf
Introduksjon
BYCHIPS er strømprodusenten for IPD30N06S2L13ATMA4, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for IPD30N06S2L13ATMA4 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2V @ 80µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO252-3-11 |
| Serie: | OptiMOS™ |
| Rds På (Maks) @ Id, Vgs: | 13 mOhm @ 30A, 10V |
| Strømdissipasjon (maks): | 136W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | IPD30N06S2L13ATMA4-ND IPD30N06S2L13ATMA4TR SP001061280 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 26 Weeks |
| Produsentens varenummer: | IPD30N06S2L13ATMA4 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1800pF @ 25V |
| Gateavgift (Qg) (Maks) @ Vgs: | 69nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11 |
| Drain til Source Voltage (VDSS): | 55V |
| Beskrivelse: | MOSFET N-CH 55V 30A TO252-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 30A (Tc) |
| Email: | [email protected] |
Beslektede deler til IPD30N06S2L13ATMA4
| Bilde | Delenummer | produsenter | Beskrivelse | Utsikt |
|---|---|---|---|---|
 |
IPD30N06S223ATMA1 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørsel |
|
IPD30N06S2L23ATMA3 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørsel |
|
IPD30N03S2L20ATMA1 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Forespørsel |
|
IPD30N06S4L23ATMA2 | Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | Forespørsel |
|
IPD30N06S2L-13 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørsel |
|
IPD30N06S223ATMA2 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørsel |
|
IPD30N06S2L23ATMA1 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørsel |
|
IPD30N06S2-15 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørsel |
|
IPD30N06S215ATMA2 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørsel |
|
IPD30N06S4L23ATMA1 | Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | Forespørsel |
|
IPD30N08S2L-21 | Infineon Technologies | MOSFET N-CH 75V 30A TO252-3 | Forespørsel |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog