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IPP048N12N3 G
- Delenummer:
- IPP048N12N3 G
- Beskrivelse:
- MOSFET N-CH 120V 100A TO220-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 15800 Pieces
- Dataark:
- IPP048N12N3 G.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 230µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO220-3-1 |
| Serie: | OptiMOS™ |
| Rds På (Maks) @ Id, Vgs: | 4.8 mOhm @ 100A, 10V |
| Strømdissipasjon (maks): | 300W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-220-3 |
| Andre navn: | IPP048N12N3G IPP048N12N3GXKSA1 SP000652734 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 12 Weeks |
| Produsentens varenummer: | IPP048N12N3 G |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 12000pF @ 60V |
| Gateavgift (Qg) (Maks) @ Vgs: | 182nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 120V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1 |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 120V |
| Beskrivelse: | MOSFET N-CH 120V 100A TO220-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 100A (Tc) |
| Email: | [email protected] |
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