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IRFB9N65A
- Delenummer:
- IRFB9N65A
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 650V 8.5A TO-220AB
- Lead Free Status / RoHS Status:
- Inneholder bly / RoHS ikke-kompatibel
- Tilgjengelig mengde:
- 18310 Pieces
- Dataark:
- 1.IRFB9N65A.pdf2.IRFB9N65A.pdf
Introduksjon
BYCHIPS er strømprodusenten for IRFB9N65A, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for IRFB9N65A via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-220AB |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 930 mOhm @ 5.1A, 10V |
| Strømdissipasjon (maks): | 167W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-220-3 |
| Andre navn: | *IRFB9N65A |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | IRFB9N65A |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1417pF @ 25V |
| Gateavgift (Qg) (Maks) @ Vgs: | 48nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB |
| Drain til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 8.5A TO-220AB |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 8.5A (Tc) |
| Email: | [email protected] |
Beslektede deler til IRFB9N65A
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