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MJD122T4G
- Delenummer:
- MJD122T4G
- Produsent:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- TRANS NPN DARL 100V 8A DPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 16438 Pieces
- Dataark:
- MJD122T4G.pdf
Introduksjon
BYCHIPS er strømprodusenten for MJD122T4G, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for MJD122T4G via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 100V |
|---|---|
| Vce Metning (Maks) @ Ib, Ic: | 4V @ 80mA, 8A |
| Transistor Type: | NPN - Darlington |
| Leverandør Enhetspakke: | DPAK-3 |
| Serie: | - |
| Strøm - Maks: | 1.75W |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | MJD122T4GOS MJD122T4GOS-ND MJD122T4GOSTR |
| Driftstemperatur: | -65°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 18 Weeks |
| Produsentens varenummer: | MJD122T4G |
| Frekvens - Overgang: | 4MHz |
| Utvidet beskrivelse: | Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK-3 |
| Beskrivelse: | TRANS NPN DARL 100V 8A DPAK |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 4A, 4V |
| Gjeldende - Samler Cutoff (Maks): | 10µA |
| Nåværende - Samler (Ic) (Maks): | 8A |
| Email: | [email protected] |
Beslektede deler til MJD122T4G
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