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NSBA114YDXV6T1G
- Delenummer:
- NSBA114YDXV6T1G
- Produsent:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- TRANS 2PNP PREBIAS 0.5W SOT563
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 12017 Pieces
- Dataark:
- NSBA114YDXV6T1G.pdf
Introduksjon
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spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Metning (Maks) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Leverandør Enhetspakke: | SOT-563 |
| Serie: | - |
| Motstand - Emitter Base (R2) (Ohms): | 47k |
| Motstand - Base (R1) (Ohms): | 10k |
| Strøm - Maks: | 500mW |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | SOT-563, SOT-666 |
| Andre navn: | NSBA114YDXV6T1GOS NSBA114YDXV6T1GOS-ND NSBA114YDXV6T1GOSTR |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 4 Weeks |
| Produsentens varenummer: | NSBA114YDXV6T1G |
| Frekvens - Overgang: | - |
| Utvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
| Beskrivelse: | TRANS 2PNP PREBIAS 0.5W SOT563 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Gjeldende - Samler Cutoff (Maks): | 500nA |
| Nåværende - Samler (Ic) (Maks): | 100mA |
| Email: | [email protected] |
Beslektede deler til NSBA114YDXV6T1G
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