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NSBA123EF3T5G
- Delenummer:
- NSBA123EF3T5G
- Produsent:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- TRANS PREBIAS DUAL PNP
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 19742 Pieces
- Dataark:
- NSBA123EF3T5G.pdf
Introduksjon
BYCHIPS er strømprodusenten for NSBA123EF3T5G, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for NSBA123EF3T5G via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Metning (Maks) @ Ib, Ic: | 250mV @ 5mA, 10mA |
| Transistor Type: | PNP - Pre-Biased |
| Leverandør Enhetspakke: | SOT-1123 |
| Serie: | - |
| Motstand - Emitter Base (R2) (Ohms): | 2.2k |
| Motstand - Base (R1) (Ohms): | 2.2k |
| Strøm - Maks: | 254mW |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | SOT-1123 |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 4 Weeks |
| Produsentens varenummer: | NSBA123EF3T5G |
| Frekvens - Overgang: | - |
| Utvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 254mW Surface Mount SOT-1123 |
| Beskrivelse: | TRANS PREBIAS DUAL PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5mA, 10V |
| Gjeldende - Samler Cutoff (Maks): | 500nA |
| Nåværende - Samler (Ic) (Maks): | 100mA |
| Email: | [email protected] |
Beslektede deler til NSBA123EF3T5G
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