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NSVMUN531335DW1T1G
- Delenummer:
- NSVMUN531335DW1T1G
- Produsent:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- TRANS PREBIAS NPN/PNP 50V 6TSSOP
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 12525 Pieces
- Dataark:
- NSVMUN531335DW1T1G.pdf
Introduksjon
BYCHIPS er strømprodusenten for NSVMUN531335DW1T1G, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for NSVMUN531335DW1T1G via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Metning (Maks) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Transistor Type: | 1 NPN Pre-Biased, 1 PNP |
| Leverandør Enhetspakke: | SC-88/SC70-6/SOT-363 |
| Serie: | - |
| Motstand - Emitter Base (R2) (Ohms): | 47k |
| Motstand - Base (R1) (Ohms): | 47k, 2.2k |
| Strøm - Maks: | 187mW |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 6-TSSOP, SC-88, SOT-363 |
| Andre navn: | NSVMUN531335DW1T1GOSTR |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 4 Weeks |
| Produsentens varenummer: | NSVMUN531335DW1T1G |
| Frekvens - Overgang: | - |
| Utvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363 |
| Beskrivelse: | TRANS PREBIAS NPN/PNP 50V 6TSSOP |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Gjeldende - Samler Cutoff (Maks): | 500nA |
| Nåværende - Samler (Ic) (Maks): | 100mA |
| Email: | [email protected] |
Beslektede deler til NSVMUN531335DW1T1G
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