Kjøpe NTD4960N-1G med BYCHPS
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NTD4960N-1G
- Delenummer:
- NTD4960N-1G
- Produsent:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 30V 11.1A IPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18377 Pieces
- Dataark:
- NTD4960N-1G.pdf
Introduksjon
BYCHIPS er strømprodusenten for NTD4960N-1G, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for NTD4960N-1G via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | I-Pak |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 8 mOhm @ 30A, 10V |
| Strømdissipasjon (maks): | 1.07W (Ta), 35.71W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-251-3 Short Leads, IPak, TO-251AA |
| Andre navn: | NTD4960N-1GOS |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | NTD4960N-1G |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1300pF @ 15V |
| Gateavgift (Qg) (Maks) @ Vgs: | 22nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Through Hole I-Pak |
| Drain til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 11.1A IPAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 8.9A (Ta), 55A (Tc) |
| Email: | [email protected] |
Beslektede deler til NTD4960N-1G
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