Kjøpe PSMN8R5-108ESQ med BYCHPS
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PSMN8R5-108ESQ
- Delenummer:
- PSMN8R5-108ESQ
- Produsent:
- NXP Semiconductors / Freescale
- Beskrivelse:
- MOSFET N-CH 108V 100A I2PAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 15403 Pieces
- Dataark:
- PSMN8R5-108ESQ.pdf
Introduksjon
BYCHIPS er strømprodusenten for PSMN8R5-108ESQ, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for PSMN8R5-108ESQ via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 1mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | I2PAK |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 8.5 mOhm @ 25A, 10V |
| Strømdissipasjon (maks): | 263W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andre navn: | 568-11432-5 934068134127 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | PSMN8R5-108ESQ |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 5512pF @ 50V |
| Gateavgift (Qg) (Maks) @ Vgs: | 111nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 108V 100A (Tj) 263W (Tc) Through Hole I2PAK |
| Drain til Source Voltage (VDSS): | 108V |
| Beskrivelse: | MOSFET N-CH 108V 100A I2PAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 100A (Tj) |
| Email: | [email protected] |
Beslektede deler til PSMN8R5-108ESQ
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