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RF4E110BNTR
- Delenummer:
- RF4E110BNTR
- Produsent:
- LAPIS Semiconductor
- Beskrivelse:
- MOSFET N-CH 30V 11A 8-HUML
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17319 Pieces
- Dataark:
- RF4E110BNTR.pdf
Introduksjon
BYCHIPS er strømprodusenten for RF4E110BNTR, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for RF4E110BNTR via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2V @ 250µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 6-HUML2020L8 (2x2) |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 11.1 mOhm @ 11A, 10V |
| Strømdissipasjon (maks): | 2W (Ta) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-PowerUDFN |
| Andre navn: | RF4E110BNTRTR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 10 Weeks |
| Produsentens varenummer: | RF4E110BNTR |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1200pF @ 15V |
| Gateavgift (Qg) (Maks) @ Vgs: | 24nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount 6-HUML2020L8 (2x2) |
| Drivspenning (Maks. Rds På, Min Rds På): | 4.5V, 10V |
| Drain til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 11A 8-HUML |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 11A (Ta) |
| Email: | [email protected] |
Beslektede deler til RF4E110BNTR
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