Kjøpe RN1131MFV(TL3,T) med BYCHPS
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RN1131MFV(TL3,T)
- Delenummer:
- RN1131MFV(TL3,T)
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- TRANS PREBIAS NPN 0.15W VESM
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17878 Pieces
- Dataark:
- RN1131MFV(TL3,T).pdf
Introduksjon
BYCHIPS er strømprodusenten for RN1131MFV(TL3,T), vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for RN1131MFV(TL3,T) via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Metning (Maks) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Transistor Type: | NPN - Pre-Biased |
| Leverandør Enhetspakke: | VESM |
| Serie: | - |
| Motstand - Emitter Base (R2) (Ohms): | - |
| Motstand - Base (R1) (Ohms): | 100k |
| Strøm - Maks: | 150mW |
| emballasje: | Cut Tape (CT) |
| Pakke / tilfelle: | SOT-723 |
| Andre navn: | RN1131MFV(TL3T)CT |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | RN1131MFV(TL3,T) |
| Frekvens - Overgang: | - |
| Utvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
| Beskrivelse: | TRANS PREBIAS NPN 0.15W VESM |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Gjeldende - Samler Cutoff (Maks): | 100nA (ICBO) |
| Nåværende - Samler (Ic) (Maks): | 100mA |
| Email: | [email protected] |
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