Kjøpe RN2710JE(TE85L,F) med BYCHPS
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RN2710JE(TE85L,F)
- Delenummer:
- RN2710JE(TE85L,F)
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- TRANS 2PNP PREBIAS 0.1W ESV
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18056 Pieces
- Dataark:
- RN2710JE(TE85L,F).pdf
Introduksjon
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spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Metning (Maks) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Leverandør Enhetspakke: | ESV |
| Serie: | - |
| Motstand - Emitter Base (R2) (Ohms): | - |
| Motstand - Base (R1) (Ohms): | 4.7k |
| Strøm - Maks: | 100mW |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | SOT-553 |
| Andre navn: | RN2710JE(TE85LF)TR |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | RN2710JE(TE85L,F) |
| Frekvens - Overgang: | 200MHz |
| Utvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV |
| Beskrivelse: | TRANS 2PNP PREBIAS 0.1W ESV |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Gjeldende - Samler Cutoff (Maks): | 100nA (ICBO) |
| Nåværende - Samler (Ic) (Maks): | 100mA |
| Email: | [email protected] |
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