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RQ3E120GNTB
- Delenummer:
- RQ3E120GNTB
- Produsent:
- LAPIS Semiconductor
- Beskrivelse:
- MOSFET N-CH 30V 12A 8-HSMT
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14219 Pieces
- Dataark:
- RQ3E120GNTB.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.5V @ 1mA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 8-HSMT (3.2x3) |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 8.8 mOhm @ 12A, 10V |
| Strømdissipasjon (maks): | 2W (Ta), 16W (Tc) |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | 8-PowerVDFN |
| Andre navn: | RQ3E120GNTBDKR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 10 Weeks |
| Produsentens varenummer: | RQ3E120GNTB |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 590pF @ 15V |
| Gateavgift (Qg) (Maks) @ Vgs: | 10nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 30V 12A (Ta) 2W (Ta), 16W (Tc) Surface Mount 8-HSMT (3.2x3) |
| Drivspenning (Maks. Rds På, Min Rds På): | 4.5V, 10V |
| Drain til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 12A 8-HSMT |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 12A (Ta) |
| Email: | [email protected] |
Beslektede deler til RQ3E120GNTB
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