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SI1070X-T1-GE3
- Delenummer:
- SI1070X-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 30V 1.2A SOT563F
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18078 Pieces
- Dataark:
- SI1070X-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 1.55V @ 250µA |
|---|---|
| Vgs (maks): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | SC-89-6 |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 99 mOhm @ 1.2A, 4.5V |
| Strømdissipasjon (maks): | 236mW (Ta) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | SOT-563, SOT-666 |
| Andre navn: | SI1070X-T1-GE3TR SI1070XT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 15 Weeks |
| Produsentens varenummer: | SI1070X-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 385pF @ 15V |
| Gateavgift (Qg) (Maks) @ Vgs: | 8.3nC @ 5V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 30V 236mW (Ta) Surface Mount SC-89-6 |
| Drivspenning (Maks. Rds På, Min Rds På): | 2.5V, 4.5V |
| Drain til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 1.2A SOT563F |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | - |
| Email: | [email protected] |
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