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SI4110DY-T1-GE3
- Delenummer:
- SI4110DY-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 80V 17.3A 8-SOIC
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18219 Pieces
- Dataark:
- SI4110DY-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 8-SO |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 13 mOhm @ 11.7A, 10V |
| Strømdissipasjon (maks): | 3.6W (Ta), 7.8W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navn: | SI4110DY-T1-GE3TR SI4110DYT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI4110DY-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 2205pF @ 40V |
| Gateavgift (Qg) (Maks) @ Vgs: | 53nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 80V 17.3A (Tc) 3.6W (Ta), 7.8W (Tc) Surface Mount 8-SO |
| Drain til Source Voltage (VDSS): | 80V |
| Beskrivelse: | MOSFET N-CH 80V 17.3A 8-SOIC |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 17.3A (Tc) |
| Email: | [email protected] |
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