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SI4477DY-T1-GE3
- Delenummer:
- SI4477DY-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 20V 26.6A 8-SOIC
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18450 Pieces
- Dataark:
- SI4477DY-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 1.5V @ 250µA |
|---|---|
| Vgs (maks): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 8-SO |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 6.2 mOhm @ 18A, 4.5V |
| Strømdissipasjon (maks): | 3W (Ta), 6.6W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navn: | SI4477DY-T1-GE3-ND SI4477DY-T1-GE3TR SI4477DYT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 24 Weeks |
| Produsentens varenummer: | SI4477DY-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 4600pF @ 10V |
| Gateavgift (Qg) (Maks) @ Vgs: | 190nC @ 10V |
| FET Type: | P-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | P-Channel 20V 26.6A (Tc) 3W (Ta), 6.6W (Tc) Surface Mount 8-SO |
| Drivspenning (Maks. Rds På, Min Rds På): | 2.5V, 4.5V |
| Drain til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET P-CH 20V 26.6A 8-SOIC |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 26.6A (Tc) |
| Email: | [email protected] |
Beslektede deler til SI4477DY-T1-GE3
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