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SI4900DY-T1-GE3
- Delenummer:
- SI4900DY-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET 2N-CH 60V 5.3A 8-SOIC
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 19771 Pieces
- Dataark:
- SI4900DY-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SI4900DY-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SI4900DY-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3V @ 250µA |
|---|---|
| Leverandør Enhetspakke: | 8-SO |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 58 mOhm @ 4.3A, 10V |
| Strøm - Maks: | 3.1W |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-SOIC (0.154", 3.90mm Width) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 15 Weeks |
| Produsentens varenummer: | SI4900DY-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 665pF @ 15V |
| Gateavgift (Qg) (Maks) @ Vgs: | 20nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funksjonen: | Logic Level Gate |
| Utvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SO |
| Drain til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET 2N-CH 60V 5.3A 8-SOIC |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 5.3A |
| Email: | [email protected] |
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