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SI5499DC-T1-GE3
- Delenummer:
- SI5499DC-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 8V 6A 1206-8
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18900 Pieces
- Dataark:
- SI5499DC-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 800mV @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 1206-8 ChipFET™ |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 36 mOhm @ 5.1A, 4.5V |
| Strømdissipasjon (maks): | 2.5W (Ta), 6.2W (Tc) |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | 8-SMD, Flat Lead |
| Andre navn: | SI5499DC-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI5499DC-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1290pF @ 4V |
| Gateavgift (Qg) (Maks) @ Vgs: | 35nC @ 8V |
| FET Type: | P-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | P-Channel 8V 6A (Tc) 2.5W (Ta), 6.2W (Tc) Surface Mount 1206-8 ChipFET™ |
| Drain til Source Voltage (VDSS): | 8V |
| Beskrivelse: | MOSFET P-CH 8V 6A 1206-8 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |
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