Kjøpe SI5855DC-T1-E3 med BYCHPS
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SI5855DC-T1-E3
- Delenummer:
- SI5855DC-T1-E3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 20V 2.7A 1206-8
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 15520 Pieces
- Dataark:
- SI5855DC-T1-E3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SI5855DC-T1-E3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SI5855DC-T1-E3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 1V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 1206-8 ChipFET™ |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 110 mOhm @ 2.7A, 4.5V |
| Strømdissipasjon (maks): | 1.1W (Ta) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-SMD, Flat Lead |
| Andre navn: | SI5855DC-T1-E3TR SI5855DCT1E3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI5855DC-T1-E3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | - |
| Gateavgift (Qg) (Maks) @ Vgs: | 7.7nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funksjonen: | Schottky Diode (Isolated) |
| Utvidet beskrivelse: | P-Channel 20V 2.7A (Ta) 1.1W (Ta) Surface Mount 1206-8 ChipFET™ |
| Drain til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET P-CH 20V 2.7A 1206-8 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 2.7A (Ta) |
| Email: | [email protected] |
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