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SI6473DQ-T1-GE3
- Delenummer:
- SI6473DQ-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 20V 6.2A 8-TSSOP
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14864 Pieces
- Dataark:
- SI6473DQ-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 450mV @ 250µA (Min) |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 8-TSSOP |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 12.5 mOhm @ 9.5A, 4.5V |
| Strømdissipasjon (maks): | 1.08W (Ta) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-TSSOP (0.173", 4.40mm Width) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI6473DQ-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | - |
| Gateavgift (Qg) (Maks) @ Vgs: | 70nC @ 5V |
| FET Type: | P-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | P-Channel 20V 6.2A (Ta) 1.08W (Ta) Surface Mount 8-TSSOP |
| Drain til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET P-CH 20V 6.2A 8-TSSOP |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 6.2A (Ta) |
| Email: | [email protected] |
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