Kjøpe SI6562DQ-T1-GE3 med BYCHPS
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SI6562DQ-T1-GE3
- Delenummer:
- SI6562DQ-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N/P-CH 20V 8-TSSOP
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 16321 Pieces
- Dataark:
- SI6562DQ-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SI6562DQ-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SI6562DQ-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 600mV @ 250µA (Min) |
|---|---|
| Leverandør Enhetspakke: | 8-TSSOP |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 30 mOhm @ 4.5A, 4.5V |
| Strøm - Maks: | 1W |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | 8-TSSOP (0.173", 4.40mm Width) |
| Andre navn: | SI6562DQ-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI6562DQ-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | - |
| Gateavgift (Qg) (Maks) @ Vgs: | 25nC @ 4.5V |
| FET Type: | N and P-Channel |
| FET-funksjonen: | Logic Level Gate |
| Utvidet beskrivelse: | Mosfet Array N and P-Channel 20V 1W Surface Mount 8-TSSOP |
| Drain til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N/P-CH 20V 8-TSSOP |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | - |
| Email: | [email protected] |
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