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SI7882DP-T1-GE3
- Delenummer:
- SI7882DP-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 12V 13A PPAK SO-8
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 12951 Pieces
- Dataark:
- SI7882DP-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SI7882DP-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SI7882DP-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 1.4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® SO-8 |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 5.5 mOhm @ 17A, 4.5V |
| Strømdissipasjon (maks): | 1.9W (Ta) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | PowerPAK® SO-8 |
| Andre navn: | SI7882DP-T1-GE3TR SI7882DPT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI7882DP-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | - |
| Gateavgift (Qg) (Maks) @ Vgs: | 30nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 12V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 |
| Drain til Source Voltage (VDSS): | 12V |
| Beskrivelse: | MOSFET N-CH 12V 13A PPAK SO-8 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 13A (Ta) |
| Email: | [email protected] |
Beslektede deler til SI7882DP-T1-GE3
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