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SI9410BDY-T1-GE3
- Delenummer:
- SI9410BDY-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 30V 6.2A 8SOIC
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 13493 Pieces
- Dataark:
- SI9410BDY-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 8-SO |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 24 mOhm @ 8.1A, 10V |
| Strømdissipasjon (maks): | 1.5W (Ta) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-SOIC (0.154", 3.90mm Width) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI9410BDY-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | - |
| Gateavgift (Qg) (Maks) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 30V 6.2A (Ta) 1.5W (Ta) Surface Mount 8-SO |
| Drain til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 6.2A 8SOIC |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 6.2A (Ta) |
| Email: | [email protected] |
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