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SIA477EDJT-T1-GE3
- Delenummer:
- SIA477EDJT-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 12V 12A SC70-6
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 19300 Pieces
- Dataark:
- SIA477EDJT-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 1V @ 250µA |
|---|---|
| Vgs (maks): | ±8V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® SC-70-6 Single |
| Serie: | TrenchFET® Gen III |
| Rds På (Maks) @ Id, Vgs: | 13 mOhm @ 5A, 4.5V |
| Strømdissipasjon (maks): | 19W (Tc) |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | PowerPAK® SC-70-6 |
| Andre navn: | SIA477EDJT-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 15 Weeks |
| Produsentens varenummer: | SIA477EDJT-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 3050pF @ 6V |
| Gateavgift (Qg) (Maks) @ Vgs: | 50nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
| Drivspenning (Maks. Rds På, Min Rds På): | 1.8V, 4.5V |
| Drain til Source Voltage (VDSS): | 12V |
| Beskrivelse: | MOSFET P-CH 12V 12A SC70-6 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
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