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SIA850DJ-T1-GE3
- Delenummer:
- SIA850DJ-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 190V 0.95A SC70-6
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 15444 Pieces
- Dataark:
- SIA850DJ-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIA850DJ-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIA850DJ-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 1.4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® SC-70-6 Dual |
| Serie: | LITTLE FOOT® |
| Rds På (Maks) @ Id, Vgs: | 3.8 Ohm @ 360mA, 4.5V |
| Strømdissipasjon (maks): | 1.9W (Ta), 7W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | PowerPAK® SC-70-6 Dual |
| Andre navn: | SIA850DJ-T1-GE3-ND SIA850DJ-T1-GE3TR SIA850DJT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SIA850DJ-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 90pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 4.5nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | Schottky Diode (Isolated) |
| Utvidet beskrivelse: | N-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual |
| Drain til Source Voltage (VDSS): | 190V |
| Beskrivelse: | MOSFET N-CH 190V 0.95A SC70-6 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 950mA (Tc) |
| Email: | [email protected] |
Beslektede deler til SIA850DJ-T1-GE3
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