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SIHB12N65E-GE3
- Delenummer:
- SIHB12N65E-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 650V 12A D2PAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17944 Pieces
- Dataark:
- SIHB12N65E-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIHB12N65E-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIHB12N65E-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | D²PAK (TO-263) |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
| Strømdissipasjon (maks): | 156W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 19 Weeks |
| Produsentens varenummer: | SIHB12N65E-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1224pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 70nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) |
| Drain til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 12A D2PAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIHB12N65E-GE3
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