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SIHB33N60E-GE3
- Delenummer:
- SIHB33N60E-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 600V 33A TO-263
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 13583 Pieces
- Dataark:
- SIHB33N60E-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | D2PAK |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 99 mOhm @ 16.5A, 10V |
| Strømdissipasjon (maks): | 278W (Tc) |
| emballasje: | Bulk |
| Pakke / tilfelle: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navn: | SIHB33N60EGE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 19 Weeks |
| Produsentens varenummer: | SIHB33N60E-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 3508pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 150nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D2PAK |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 33A TO-263 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 33A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIHB33N60E-GE3
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