Kjøpe SIHD12N50E-GE3 med BYCHPS
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SIHD12N50E-GE3
- Delenummer:
- SIHD12N50E-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CHAN 500V DPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 12460 Pieces
- Dataark:
- SIHD12N50E-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIHD12N50E-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIHD12N50E-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | D-PAK (TO-252AA) |
| Serie: | E |
| Rds På (Maks) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
| Strømdissipasjon (maks): | 114W (Tc) |
| emballasje: | Cut Tape (CT) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | SIHD12N50E-GE3CT SIHD12N50E-GE3CT-ND |
| Driftstemperatur: | -55°C ~ 150°C (TA) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 19 Weeks |
| Produsentens varenummer: | SIHD12N50E-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 886pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 50nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 550V 10.5A (Tc) 114W (Tc) Surface Mount D-PAK (TO-252AA) |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 550V |
| Beskrivelse: | MOSFET N-CHAN 500V DPAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 10.5A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIHD12N50E-GE3
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