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SIHG61N65EF-GE3
- Delenummer:
- SIHG61N65EF-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 650V 64A TO247AC
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 12187 Pieces
- Dataark:
- SIHG61N65EF-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIHG61N65EF-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIHG61N65EF-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-247AC |
| Serie: | E |
| Rds På (Maks) @ Id, Vgs: | 47 mOhm @ 30.5A, 10V |
| Strømdissipasjon (maks): | 520W (Tc) |
| Pakke / tilfelle: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 19 Weeks |
| Produsentens varenummer: | SIHG61N65EF-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 7407pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 371nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 650V 64A (Tc) 520W (Tc) Through Hole TO-247AC |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 64A TO247AC |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 64A (Tc) |
| Email: | [email protected] |
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