Kjøpe SIHH11N65E-T1-GE3 med BYCHPS
Kjøp med garanti
SIHH11N65E-T1-GE3
- Delenummer:
- SIHH11N65E-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CHAN 650V 12A POWERPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 15267 Pieces
- Dataark:
- SIHH11N65E-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIHH11N65E-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIHH11N65E-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® 8 x 8 |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 363 mOhm @ 6A, 10V |
| Strømdissipasjon (maks): | 130W (Tc) |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | 8-PowerTDFN |
| Andre navn: | SiHH11N65E-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 19 Weeks |
| Produsentens varenummer: | SIHH11N65E-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1257pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 68nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 650V 12A (Tc) 130W (Tc) Surface Mount PowerPAK® 8 x 8 |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CHAN 650V 12A POWERPAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIHH11N65E-T1-GE3
| Bilde | Delenummer | produsenter | Beskrivelse | Utsikt |
|---|---|---|---|---|
 |
SIHH11N65EF-T1-GE3 | Vishay Siliconix | MOSFET N-CHAN 600V 24A POWERPAK | Forespørsel |
 |
IRF7665S2TR1PBF | Infineon Technologies | MOSFET N-CH 100V 4.1A DFET SB | Forespørsel |
|
SIHH14N65EF-T1-GE3 | Vishay Siliconix | MOSFET N-CHAN 650V 15A POWERPAK | Forespørsel |
 |
STP9NK65Z | STMicroelectronics | MOSFET N-CH 650V 6.4A TO-220 | Forespørsel |
 |
SIHH11N60EF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 600V 11A POWERPAK8X8 | Forespørsel |
|
SIHH14N60EF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 600V 15A POWERPAK8X8 | Forespørsel |
 |
DMS2085LSD-13 | Diodes Incorporated | MOSFET P-CH 20V 3.3A | Forespørsel |
|
SIHH14N60E-T1-GE3 | Vishay Siliconix | MOSFET N-CH 600V 16A POWERPAK8X8 | Forespørsel |
|
SIHH11N60E-T1-GE3 | Vishay Siliconix | MOSFET N-CH 600V 11A POWERPAK8X8 | Forespørsel |
 |
NTMFS4933NT3G | ON Semiconductor | MOSFET N-CH 30V 20A SO8FL | Forespørsel |
|
SIHH14N65E-T1-GE3 | Vishay Siliconix | MOSFET N-CH 650V 15A PWRPAK 8X8 | Forespørsel |
 |
IXFN100N20 | IXYS | MOSFET N-CH 200V 100A SOT-227B | Forespørsel |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers