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SIHH24N65E-T1-GE3
- Delenummer:
- SIHH24N65E-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CHAN 650V 23A POWERPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 16508 Pieces
- Dataark:
- SIHH24N65E-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® 8 x 8 |
| Serie: | - |
| Rds På (Maks) @ Id, Vgs: | 150 mOhm @ 12A, 10V |
| Strømdissipasjon (maks): | 202W (Tc) |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | 8-PowerTDFN |
| Andre navn: | SiHH24N65E-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 20 Weeks |
| Produsentens varenummer: | SIHH24N65E-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 2814pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 116nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 650V 23A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8 |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CHAN 650V 23A POWERPAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 23A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIHH24N65E-T1-GE3
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