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SIS410DN-T1-GE3
- Delenummer:
- SIS410DN-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 20V 35A PPAK 1212-8
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 19854 Pieces
- Dataark:
- SIS410DN-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIS410DN-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIS410DN-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® 1212-8 |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 4.8 mOhm @ 20A, 10V |
| Strømdissipasjon (maks): | 3.8W (Ta), 52W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | PowerPAK® 1212-8 |
| Andre navn: | SIS410DN-T1-GE3-ND SIS410DN-T1-GE3TR SIS410DNT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 24 Weeks |
| Produsentens varenummer: | SIS410DN-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1600pF @ 10V |
| Gateavgift (Qg) (Maks) @ Vgs: | 41nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 |
| Drivspenning (Maks. Rds På, Min Rds På): | 4.5V, 10V |
| Drain til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N-CH 20V 35A PPAK 1212-8 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 35A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIS410DN-T1-GE3
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