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SISS10DN-T1-GE3
- Delenummer:
- SISS10DN-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 40V 60A PPAK 1212-8S
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 13424 Pieces
- Dataark:
- SISS10DN-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SISS10DN-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SISS10DN-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.4V @ 250µA |
|---|---|
| Vgs (maks): | +20V, -16V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® 1212-8S (3.3x3.3) |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 2.65 mOhm @ 15A, 10V |
| Strømdissipasjon (maks): | 57W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 8-PowerVDFN |
| Andre navn: | SISS10DN-T1-GE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 19 Weeks |
| Produsentens varenummer: | SISS10DN-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 3750pF @ 20V |
| Gateavgift (Qg) (Maks) @ Vgs: | 75nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 40V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3) |
| Drivspenning (Maks. Rds På, Min Rds På): | 4.5V, 10V |
| Drain til Source Voltage (VDSS): | 40V |
| Beskrivelse: | MOSFET N-CH 40V 60A PPAK 1212-8S |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |
Beslektede deler til SISS10DN-T1-GE3
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