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SQD50N10-8M9L_GE3
- Delenummer:
- SQD50N10-8M9L_GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CHAN 100V TO252
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18780 Pieces
- Dataark:
- SQD50N10-8M9L_GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-252 |
| Serie: | Automotive, AEC-Q101, TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 8.9 mOhm @ 15A, 10V |
| Strømdissipasjon (maks): | 136W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | SQD50N10-8M9L_GE3TR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 18 Weeks |
| Produsentens varenummer: | SQD50N10-8M9L_GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 2950pF @ 25V |
| Gateavgift (Qg) (Maks) @ Vgs: | 70nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252 |
| Drivspenning (Maks. Rds På, Min Rds På): | 4.5V, 10V |
| Drain til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CHAN 100V TO252 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
Beslektede deler til SQD50N10-8M9L_GE3
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